BDP949 INFINEON

Symbol Micros: TBDP949

194649

TBDP949

Contractor Symbol:

Case : SOT223

Datasheet

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Trans GP BJT NPN 60V 3A 5000mW Automotive 4-Pin(3+Tab) SOT-223 T/R BDP949H6327XTSA1 BDP949 BDP 949 H6327 TR BDP949H6327XT

Parameters

Power dissipation:	5W
Manufacturer:	Infineon Technologies
Current gain factor:	475
Case:	SOT223
Cutoff frequency:	100MHz
Max. collector current:	3A
Max collector-emmiter voltage:	60V

All parameters

         

 

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• Parameters

Power dissipation:	5W
Manufacturer:	Infineon Technologies
Current gain factor:	475
Case:	SOT223
Cutoff frequency:	100MHz
Max. collector current:	3A
Max collector-emmiter voltage:	60V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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