Tranz. BF1202WR

Symbol Micros: TBF1202wr
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Case : SOT343R
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Dual channel PoLo N-Fet 10V 30mA 200mW 800MHz
Parameters
Max. drain current: 30mA
Max. power loss: 200mW
Case: SOT343R
Manufacturer: NXP
Max. drain-source voltage: 10V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 6V
Manufacturer:: Philips Manufacturer part number: BR1202WR 115 RoHS Case style: SOT343R  
In stock:
69 pcs.
Quantity of pcs. 3+ 10+ 30+ 69+
Net price (EUR) 0,3449 0,2118 0,1551 0,1326
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Packaging:
69
Max. drain current: 30mA
Max. power loss: 200mW
Case: SOT343R
Manufacturer: NXP
Max. drain-source voltage: 10V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 6V
Operating temperature (range): -65°C ~ 150°C
Mounting: SMD

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