BFR181WH6327XTSA1

Symbol Micros: TBFR181w

194694

TBFR181w

Contractor Symbol:

Case : SOT323

Datasheet

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Transistor NPN; Bipolar; 12V; 2V; 8GHz; 20mA; 175mW; -65°C~150°C; BFR181WE6327;

Parameters

Power dissipation:	175W
Manufacturer:	INFINEON
Case:	SOT323
Current gain factor:	140
Cutoff frequency:	8GHz
Max. collector current:	20mA
Max collector-emmiter voltage:	12V

All parameters

Manufacturer:: Infineon Manufacturer part number: BFR181WH6327XTSA1 RoHS Case style: SOT323 t/r Datasheet

In stock:

2980 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2336	0,1290	0,0858	0,0715	0,0666

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Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BFR181WH6327XTSA1 Case style: SOT323  

External warehouse:

48000 pcs.

Quantity of pcs.	6000+ (Please wait for the order confirmation)
Net price (EUR)	0,0850

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Power dissipation:	175W
Manufacturer:	INFINEON
Case:	SOT323
Current gain factor:	140
Cutoff frequency:	8GHz
Max. collector current:	20mA
Max collector-emmiter voltage:	12V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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