BFR181WH6327XTSA1

Symbol Micros: TBFR181w
Contractor Symbol:
Case : SOT323
Transistor NPN; Bipolar; 12V; 2V; 8GHz; 20mA; 175mW; -65°C~150°C; BFR181WE6327;
Parameters
Power dissipation: 175W
Manufacturer: INFINEON
Current gain factor: 140
Case: SOT323
Cutoff frequency: 8GHz
Max. collector current: 20mA
Max collector-emmiter voltage: 12V
Manufacturer:: Infineon Manufacturer part number: BFR181WH6327XTSA1 RoHS Case style: SOT323 t/r Datasheet
In stock:
2980 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2391 0,1321 0,0878 0,0732 0,0682
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BFR181WH6327XTSA1 Case style: SOT323  
External warehouse:
6000 pcs.
Quantity of pcs. 3000+ (Please wait for the order confirmation)
Net price (EUR) 0,0866
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: BFR181WH6327XTSA1 Case style: SOT323  
External warehouse:
165000 pcs.
Quantity of pcs. 6000+ (Please wait for the order confirmation)
Net price (EUR) 0,0831
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Power dissipation: 175W
Manufacturer: INFINEON
Current gain factor: 140
Case: SOT323
Cutoff frequency: 8GHz
Max. collector current: 20mA
Max collector-emmiter voltage: 12V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN