BFR93AE6327HTSA1

Symbol Micros: TBFR93a

6121

TBFR93a

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor NPN; 140; 300mW; 12V; 90mA; 6GHz; -55°C ~ 150°C; Replacement: BFR93AE6327HTSA1; BFR93AE6327; BFR93A; BFR93A,215; BFR93A,235; BFR9

Parameters

Power dissipation:	300mW
Manufacturer:	Infineon Technologies
Current gain factor:	140
Case:	SOT23
Cutoff frequency:	6GHz
Max. collector current:	90mA
Max collector-emmiter voltage:	12V

All parameters

Manufacturer:: Infineon Manufacturer part number: BFR93AE6327HTSA1 RoHS Case style: SOT23t/r Datasheet

In stock:

4060 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3179	0,1751	0,1377	0,1274	0,1223

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BFR93AE6327HTSA1 Case style: SOT23  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,1223

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

Manufacturer:: Infineon Manufacturer part number: BFR93AE6327HTSA1 Case style: SOT23  

External warehouse:

1698000 pcs.

Quantity of pcs.	6000+ (Please wait for the order confirmation)
Net price (EUR)	0,1223

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

Manufacturer:: Infineon Manufacturer part number: BFR93AE6327HTSA1 Case style: SOT23  

External warehouse:

2200 pcs.

Quantity of pcs.	100+ (Please wait for the order confirmation)
Net price (EUR)	0,1223

Add to comparison tool Add inquiry (RFQ)

Packaging:
100

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Power dissipation:	300mW
Manufacturer:	Infineon Technologies
Current gain factor:	140
Case:	SOT23
Cutoff frequency:	6GHz
Max. collector current:	90mA
Max collector-emmiter voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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