BGH75N65HS1 BASiC SEMICONDUCTOR

Symbol Micros: TBGH75N65HS1
Contractor Symbol:
Case : Rys.TBGH75N65HS1
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
Parameters
Gate charge: 444nC
Max. dissipated power: 405W
Max. collector current: 75A
Max collector current (impulse): 300A
Forvard volatge [Vgeth]: 4,2V ~ 5,8V
Case: TO247-3
Manufacturer: BASiC SEMICONDUCTOR
         
 
Item available on request
Gate charge: 444nC
Max. dissipated power: 405W
Max. collector current: 75A
Max collector current (impulse): 300A
Forvard volatge [Vgeth]: 4,2V ~ 5,8V
Case: TO247-3
Manufacturer: BASiC SEMICONDUCTOR
Collector-emitter voltage: 650V
Operating temperature (range): -40°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT