BGH75N65HS1 BASiC SEMICONDUCTOR
Symbol Micros:
TBGH75N65HS1
Case : Rys.TBGH75N65HS1
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
Parameters
Gate charge: | 444nC |
Max. dissipated power: | 405W |
Max. collector current: | 75A |
Max collector current (impulse): | 300A |
Forvard volatge [Vgeth]: | 4,2V ~ 5,8V |
Case: | TO247-3 |
Manufacturer: | BASiC SEMICONDUCTOR |
Gate charge: | 444nC |
Max. dissipated power: | 405W |
Max. collector current: | 75A |
Max collector current (impulse): | 300A |
Forvard volatge [Vgeth]: | 4,2V ~ 5,8V |
Case: | TO247-3 |
Manufacturer: | BASiC SEMICONDUCTOR |
Collector-emitter voltage: | 650V |
Operating temperature (range): | -40°C ~ 150°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |
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