BS107P

Symbol Micros: TBS107

5997

TBS107

Contractor Symbol:

Case : TO92

Datasheet

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N-MOSFET 250mA 200V 350mW *obsolete; LTB:08.05.2015 ; LTS:31.12.2015 ;BS107AG, BS107ARL1G ; BS107P

Parameters

Open channel resistance:	30Ohm
Max. drain current:	120mA
Max. power loss:	500mW
Case:	TO92
Manufacturer:	DIODES
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: DIODES/ZETEX Manufacturer part number: BS107P RoHS Case style: TO92bul Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,8315	0,5261	0,4157	0,3782	0,3617

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Packaging:
200 Quantity (multiple: 1)

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Manufacturer:: DIODES/ZETEX Manufacturer part number: BS107P RoHS Case style: TO92 Datasheet

In stock:

20 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,8315	0,5261	0,4157	0,3782	0,3617

Add to comparison tool Add inquiry (RFQ)

Packaging:
1000 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	30Ohm
Max. drain current:	120mA
Max. power loss:	500mW
Case:	TO92
Manufacturer:	DIODES
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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