BS170 TO92(bulk)

Symbol Micros: TBS170

6697

TBS170

Contractor Symbol:

Case : TO92

Datasheet

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N-MOSFET 500mA 60V 350mW BS170(bulk), BS170G(tube)

Parameters

Open channel resistance:	5Ohm
Max. drain current:	500mA
Max. power loss:	830mW
Case:	TO92
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: BS170 RoHS Case style: TO92bul  

In stock:

4530 pcs.

Quantity of pcs.	5+	30+	200+	1000+	3000+
Net price (EUR)	0,2609	0,1272	0,0872	0,0773	0,0747

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Packaging:
1000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	5Ohm
Max. drain current:	500mA
Max. power loss:	830mW
Case:	TO92
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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