BS170 (forming)

Micros part number: TBS170F
Package: TO92formed
N-MOSFET 500mA 60V 350mW BS170_D26Z(reel), BS170_D27Z(reel), BS170_D74Z/BS170_D75Z(ammo), BS170RL1G(T/R)
Parameters
Open channel resistance: 5Ohm
Max. drain current: 500mA
Max. power loss: 830mW
Housing: TO92formed
Max. drain-source voltage: 60V
Producer: ON SEMICONDUCTOR
Max. drain-gate voltage: 60V
Manufacturer:: ON-Semicoductor Manufacturer part number: BS170_D26Z RoHS Package: TO92formed  
In stock:
1325 pcs.
Quantity 5+ 20+ 100+ 500+ 2000+
Net price (PLN) 1,0700 0,5410 0,3260 0,2580 0,2380
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Standard packaging:
2000
Open channel resistance: 5Ohm
Max. drain current: 500mA
Max. power loss: 830mW
Housing: TO92formed
Max. drain-source voltage: 60V
Producer: ON SEMICONDUCTOR
Max. drain-gate voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Montage: THT