BS170 (forming)
Symbol Micros:
TBS170F
Case : TO92formed
N-MOSFET 500mA 60V 350mW BS170_D26Z(reel), BS170_D27Z(reel), BS170_D74Z/BS170_D75Z(ammo), BS170RL1G(T/R)
Parameters
| Open channel resistance: | 5Ohm |
| Max. drain current: | 500mA |
| Max. power loss: | 830mW |
| Case: | TO92formed |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 60V |
| Max. drain-gate voltage: | 60V |
Manufacturer:: ON-Semicoductor
Manufacturer part number: BS170-D26Z RoHS
Case style: TO92formed t/r
In stock:
4000 pcs.
| Quantity of pcs. | 3+ | 20+ | 100+ | 500+ | 2000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,3256 | 0,1803 | 0,1425 | 0,1293 | 0,1251 |
| Open channel resistance: | 5Ohm |
| Max. drain current: | 500mA |
| Max. power loss: | 830mW |
| Case: | TO92formed |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 60V |
| Max. drain-gate voltage: | 60V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | THT |
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