BSC007N04LS6

Symbol Micros: TBSC007n04ls6

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TBSC007n04ls6

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Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP OptiMOS 6 BSC007N04LS6ATMA1

Parameters

Open channel resistance:	1mOhm
Max. drain current:	381A
Max. power loss:	188W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1mOhm
Max. drain current:	381A
Max. power loss:	188W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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