BSC010NE2LSATMA1 Infineon

Symbol Micros: TBSC010ne2ls
Contractor Symbol:
Case : TDSON08
N-MOSFET 25V 100A
Parameters
Open channel resistance: 1,3mOhm
Max. drain current: 100A
Max. power loss: 96W
Case: TDSON08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 25V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSC010NE2LSATMA1 RoHS Case style: TDSON08 Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,2437 0,9492 0,7867 0,6878 0,6548
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Packaging:
50
Open channel resistance: 1,3mOhm
Max. drain current: 100A
Max. power loss: 96W
Case: TDSON08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 25V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD