BSC010NE2LSATMA1 Infineon

Symbol Micros: TBSC010ne2ls

109794

TBSC010ne2ls

Contractor Symbol:

Case : TDSON08

Datasheet

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N-MOSFET 25V 100A

Parameters

Open channel resistance:	1,3mOhm
Max. drain current:	100A
Max. power loss:	96W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	25V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC010NE2LSATMA1 RoHS Case style: TDSON08 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,2355	0,9430	0,7815	0,6832	0,6505

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,3mOhm
Max. drain current:	100A
Max. power loss:	96W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	25V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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