BSC010NE2LSATMA1 Infineon

Symbol Micros: TBSC010ne2ls

109794

TBSC010ne2ls

Contractor Symbol:

Case : TDSON08

Datasheet

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N-MOSFET 25V 100A

Parameters

Open channel resistance:	1,3mOhm
Max. drain current:	100A
Max. power loss:	96W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	25V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC010NE2LSATMA1 RoHS Case style: TDSON08 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,2357	0,9432	0,7817	0,6834	0,6506

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Packaging:
50 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: BSC010NE2LSATMA1 Case style: TDSON08  

External warehouse:

5000 pcs.

Quantity of pcs.	5000+ (Please wait for the order confirmation)
Net price (EUR)	0,6506

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Packaging:
5000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	1,3mOhm
Max. drain current:	100A
Max. power loss:	96W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	25V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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