BSC016N03MS G

Symbol Micros: TBSC016n03ms

57919

TBSC016n03ms

Contractor Symbol:

Case : TDSON08

Datasheet

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N-MOSFET 100A 30V 125W 0.0016Ω

Parameters

Open channel resistance:	2mOhm
Max. drain current:	100A
Max. power loss:	125W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	2mOhm
Max. drain current:	100A
Max. power loss:	125W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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