BSC016N06NS

Symbol Micros: TBSC016n06ns

82130

TBSC016n06ns

Contractor Symbol:

Case : TDSON08

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 60V; 20V; 2,9mOhm; 100A; 139W; -55°C ~ 150°C;

Parameters

Open channel resistance:	2,9mOhm
Max. drain current:	100A
Max. power loss:	139W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC016N06NS RoHS Case style: TDSON08 Datasheet

In stock:

39 pcs.

Quantity of pcs.	1+	5+	20+	100+	300+
Net price (EUR)	2,3729	1,8842	1,7024	1,6103	1,5819

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BSC016N06NSATMA1 Case style: TDSON08  

External warehouse:

50000 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,5819

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Packaging:
5000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	2,9mOhm
Max. drain current:	100A
Max. power loss:	139W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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