BSC018NE2LS Infineon

Symbol Micros: TBSC018ne2ls

113247

TBSC018ne2ls

Contractor Symbol:

Case : TDSON08

Datasheet

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N-MOSFET 25V 29A 1.8mΩ BSC018NE2LSI, BSC018NE2LSATMA1

Parameters

Open channel resistance:	2,3mOhm
Max. drain current:	100A
Max. power loss:	69W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	25V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC018NE2LS RoHS Case style: TDSON08 Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,7184	0,4507	0,3733	0,3334	0,3122

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,3mOhm
Max. drain current:	100A
Max. power loss:	69W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	25V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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