BSC030P03NS3G Infineon

Symbol Micros: TBSC030p03ns3g

114260

TBSC030p03ns3g

Contractor Symbol:

Case : TDSON08

Datasheet

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P-MOSFET 30V 100A

Parameters

Open channel resistance:	4,6mOhm
Max. drain current:	100A
Max. power loss:	125W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	4,6mOhm
Max. drain current:	100A
Max. power loss:	125W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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