BSC030P03NS3G Infineon

Symbol Micros: TBSC030p03ns3g

114260

TBSC030p03ns3g

Contractor Symbol:

Case : TDSON08

Datasheet

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P-MOSFET 30V 100A

Parameters

Open channel resistance:	4,6mOhm
Max. drain current:	100A
Max. power loss:	125W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC030P03NS3G RoHS Case style: TDSON08 Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	5+	30+	200+	400+
Net price (EUR)	1,3200	0,9245	0,7630	0,7045	0,6951

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4,6mOhm
Max. drain current:	100A
Max. power loss:	125W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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