BSC084P03NS3GATMA1

Symbol Micros: TBSC084p03ns3g

134161

TBSC084p03ns3g

Contractor Symbol:

Case : TDSON08

Datasheet

Technical drawing Add to favourites

P-Channel MOSFET; 30V; 25V; 14mOhm; 14,9A; 2,5W; -55°C ~ 150°C;

Parameters

Open channel resistance:	14mOhm
Max. drain current:	14,9A
Max. power loss:	2,5W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC084P03NS3GATMA1 Case style: TDSON08  

External warehouse:

10000 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3152

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Packaging:
5000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	14mOhm
Max. drain current:	14,9A
Max. power loss:	2,5W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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