BSC100N06LS3 G

Symbol Micros: TBSC100n06ls3
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Case : TDSON08
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N-MOSFET 50A 60V 50W 0.01Ω
Parameters
Open channel resistance: 17,9mOhm
Max. drain current: 50A
Max. power loss: 50W
Case: TDSON08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 17,9mOhm
Max. drain current: 50A
Max. power loss: 50W
Case: TDSON08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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