BSC12DN20NS3G

Symbol Micros: TBSC12dn20ns3g

194800

TBSC12dn20ns3g

Contractor Symbol:

Case : TDSON08

Datasheet

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Transistor N-Channel MOSFET; 200V; +/-20V; 125mOhm; 11,3A; 50W; -55°C~150°C; Substitute: BSC12DN20NS3GATMA1;

Parameters

Open channel resistance:	125mOhm
Max. drain current:	11,3A
Max. power loss:	50W
Case:	TDSON08
Manufacturer:	INFINEON
Max. drain-source voltage:	200V
Max. drain-gate voltage:	10V

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• Parameters

Open channel resistance:	125mOhm
Max. drain current:	11,3A
Max. power loss:	50W
Case:	TDSON08
Manufacturer:	INFINEON
Max. drain-source voltage:	200V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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