BSC190N15NS3G Infineon
Symbol Micros:
TBSC190n15ns3g
Case : TDSON08
N-MOSFET 150V 50A 125W 19mΩ BSC190N15NS3GATMA1
Parameters
| Open channel resistance: | 20mOhm |
| Max. drain current: | 50A |
| Max. power loss: | 125W |
| Case: | TDSON08 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 150V |
| Max. gate-source Voltage: | 20V |
Manufacturer:: Infineon
Manufacturer part number: BSC190N15NS3GATMA1 RoHS
Case style: TDSON08
Datasheet
In stock:
10 pcs.
| Quantity of pcs. | 2+ | 10+ | 30+ | 100+ | 400+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,8793 | 0,5535 | 0,4579 | 0,4077 | 0,3827 |
Manufacturer:: Infineon
Manufacturer part number: BSC190N15NS3GATMA1 RoHS
Case style: TDSON08
Datasheet
In stock:
100 pcs.
| Quantity of pcs. | 2+ | 10+ | 30+ | 100+ | 400+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,8793 | 0,5535 | 0,4579 | 0,4077 | 0,3827 |
Manufacturer:: Infineon
Manufacturer part number: BSC190N15NS3GATMA1
Case style: TDSON08
External warehouse:
15000 pcs.
| Quantity of pcs. | 5000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,7071 |
| Open channel resistance: | 20mOhm |
| Max. drain current: | 50A |
| Max. power loss: | 125W |
| Case: | TDSON08 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 150V |
| Max. gate-source Voltage: | 20V |
| Transistor type: | N-MOSFET |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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