BSC190N15NS3G Infineon

Symbol Micros: TBSC190n15ns3g

115605

TBSC190n15ns3g

Contractor Symbol:

Case : TDSON08

Datasheet

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N-MOSFET 150V 50A 125W 19mΩ BSC190N15NS3GATMA1

Parameters

Open channel resistance:	20mOhm
Max. drain current:	50A
Max. power loss:	125W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	150V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC190N15NS3GATMA1 RoHS Case style: TDSON08 Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	5+	20+	100+	300+
Net price (EUR)	1,8744	1,4883	1,3455	1,2730	1,2496

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Packaging:
20 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	20mOhm
Max. drain current:	50A
Max. power loss:	125W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	150V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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