BSC900N20NS3G

Symbol Micros: TBSC900n20ns3g

194818

TBSC900n20ns3g

Contractor Symbol:

Case : TDSON08

Datasheet

Technical drawing Add to favourites

Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP BSC900N20NS3GATMA1;

Parameters

Open channel resistance:	90mOhm
Max. drain current:	15,2A
Max. power loss:	62,5W
Case:	TDSON08
Manufacturer:	INFINEON
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC900N20NS3GATMA1 Case style: TDSON08  

External warehouse:

20000 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5277

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Packaging:
5000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	90mOhm
Max. drain current:	15,2A
Max. power loss:	62,5W
Case:	TDSON08
Manufacturer:	INFINEON
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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