BSD214SNH6327 Infineon

Symbol Micros: TBSD214sn
Contractor Symbol:
Case : SOT363
N-MOSFET 20V 1.5A 500mW 140mΩ
Parameters
Open channel resistance: 250mOhm
Max. drain current: 1,5A
Max. power loss: 500mW
Case: SOT363
Manufacturer: Infineon Technologies
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSD214SNH6327XTSA1 RoHS Case style: SOT363 t/r Datasheet
In stock:
17 pcs.
Quantity of pcs. 3+ 10+ 40+ 147+ 588+
Net price (EUR) 0,3148 0,2058 0,1515 0,1306 0,1215
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Packaging:
147
Open channel resistance: 250mOhm
Max. drain current: 1,5A
Max. power loss: 500mW
Case: SOT363
Manufacturer: Infineon Technologies
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD