BSD214SNH6327 Infineon

Symbol Micros: TBSD214sn

115136

TBSD214sn

Contractor Symbol:

Case : SOT363

Datasheet

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N-MOSFET 20V 1.5A 500mW 140mΩ

Parameters

Open channel resistance:	250mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SOT363
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSD214SNH6327XTSA1 RoHS Case style: SOT363 t/r Datasheet

In stock:

17 pcs.

Quantity of pcs.	3+	10+	40+	147+	588+
Net price (EUR)	0,3146	0,2056	0,1514	0,1305	0,1214

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Packaging:
147 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	250mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SOT363
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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