BSD235CH6327XTSA1

Symbol Micros: TBSD235c
Contractor Symbol:
Case : SOT363
Technical drawing Add to favourites
Mosfet Array N and P-Channel 20V 950mA, 530mA 500mW Surface Mount PG-SOT363-6
Parameters
Open channel resistance: 2,1Ohm
Max. drain current: 950mA
Max. power loss: 500mW
Case: SOT363
Manufacturer: Infineon Technologies
Max. drain-source voltage: 20V
Transistor type: N/P-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSD235CH6327XTSA1 RoHS Case style: SOT363 t/r Datasheet
In stock:
3635 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2722 0,1444 0,1119 0,1033 0,0990
Add to comparison tool
Packaging:
3000
Open channel resistance: 2,1Ohm
Max. drain current: 950mA
Max. power loss: 500mW
Case: SOT363
Manufacturer: Infineon Technologies
Max. drain-source voltage: 20V
Transistor type: N/P-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols