BSD314SPEH6327XTSA1 Infineon

Symbol Micros: TBSD314spe

122092

TBSD314spe

Contractor Symbol:

Case : SOT363

Datasheet

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P-MOSFET 30V 1.5A 500mW 140mΩ

Parameters

Open channel resistance:	230mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SOT363
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSD314SPEH6327XTSA RoHS Case style: SOT363 t/r Datasheet

In stock:

80 pcs.

Quantity of pcs.	5+	20+	100+	200+	1000+
Net price (EUR)	0,2633	0,1436	0,0943	0,0851	0,0750

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	230mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SOT363
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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