BSD840N
Symbol Micros:
TBSD840n
Case : SOT363
Transistor 2xN-Channel MOSFET; 20V; +/-8V; 400mOhm; 880mA; 500mW; -55°C~150°C; Substitute: BSD840NH6327XTSA1; BSD840NH6327;
Parameters
| Open channel resistance: | 400mOhm |
| Max. drain current: | 880mA |
| Max. power loss: | 500mW |
| Case: | SOT363 |
| Manufacturer: | INFINEON |
| Max. drain-source voltage: | 20V |
| Transistor type: | 2xN-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: BSD840NH6327XTSA1 RoHS
Case style: SOT363 t/r
Datasheet
In stock:
3000 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,2238 | 0,1238 | 0,0822 | 0,0687 | 0,0639 |
Manufacturer:: Infineon
Manufacturer part number: BSD840NH6327XTSA1
Case style: SOT363
External warehouse:
68996 pcs.
| Quantity of pcs. | 3000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0639 |
Manufacturer:: Infineon
Manufacturer part number: BSD840NH6327XTSA1
Case style: SOT363
External warehouse:
171000 pcs.
| Quantity of pcs. | 9000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0639 |
| Open channel resistance: | 400mOhm |
| Max. drain current: | 880mA |
| Max. power loss: | 500mW |
| Case: | SOT363 |
| Manufacturer: | INFINEON |
| Max. drain-source voltage: | 20V |
| Transistor type: | 2xN-MOSFET |
| Max. gate-source Voltage: | 8V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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