BSD840N

Symbol Micros: TBSD840n

194823

TBSD840n

Contractor Symbol:

Case : SOT363

Datasheet

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Transistor 2xN-Channel MOSFET; 20V; +/-8V; 400mOhm; 880mA; 500mW; -55°C~150°C; Substitute: BSD840NH6327XTSA1; BSD840NH6327;

Parameters

Open channel resistance:	400mOhm
Max. drain current:	880mA
Max. power loss:	500mW
Case:	SOT363
Manufacturer:	INFINEON
Max. drain-source voltage:	20V
Transistor type:	2xN-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSD840NH6327XTSA1 RoHS Case style: SOT363 t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2218	0,1228	0,0815	0,0681	0,0634

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	400mOhm
Max. drain current:	880mA
Max. power loss:	500mW
Case:	SOT363
Manufacturer:	INFINEON
Max. drain-source voltage:	20V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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