BSH103 NXP

Symbol Micros: TBSH103

94281

TBSH103

Contractor Symbol:

Case : SOT23

Datasheet

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N-MOSFET 30V 850mA 540mW 400mΩ

Parameters

Open channel resistance:	600mOhm
Max. drain current:	850mA
Max. power loss:	750mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

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Estimated date:
2026-02-27

Quantity of pcs.: 3000

• Parameters

Open channel resistance:	600mOhm
Max. drain current:	850mA
Max. power loss:	750mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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