BSH103 NXP

Symbol Micros: TBSH103
Contractor Symbol:
Case : SOT23
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N-MOSFET 30V 850mA 540mW 400mΩ
Parameters
Open channel resistance: 600mOhm
Max. drain current: 850mA
Max. power loss: 750mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: NXP Manufacturer part number: BSH103 RoHS Case style: SOT23t/r  
In stock:
3890 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2731 0,1449 0,1123 0,1037 0,0993
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Packaging:
3000
Open channel resistance: 600mOhm
Max. drain current: 850mA
Max. power loss: 750mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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