BSH105

Symbol Micros: TBSH105
Contractor Symbol:
Case : SOT23
N-MOSFET 1.05A 20V 0.417W 0.2Ω
Parameters
Open channel resistance: 375mOhm
Max. drain current: 1,05A
Max. power loss: 417mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 20V
Max. drain-gate voltage: 20V
Manufacturer:: NXP Manufacturer part number: BSH105,215 RoHS Case style: SOT23t/r  
In stock:
3994 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8597 0,5449 0,4298 0,3899 0,3735
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Packaging:
3000
Open channel resistance: 375mOhm
Max. drain current: 1,05A
Max. power loss: 417mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 20V
Max. drain-gate voltage: 20V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD