BSH108
Symbol Micros:
TBSH108
Case : SOT23
N-MOSFET 1.9A 0.83W 0.12Ω
Parameters
Open channel resistance: | 240mOhm |
Max. drain current: | 1,9A |
Max. power loss: | 830mW |
Case: | SOT23 |
Manufacturer: | NXP |
Max. drain-source voltage: | 30V |
Max. drain-gate voltage: | 30V |
Manufacturer:: NXP
Manufacturer part number: BSH108 RoHS
Case style: SOT23t/r
In stock:
360 pcs.
Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 2180+ |
---|---|---|---|---|---|
Net price (EUR) | 0,2136 | 0,1178 | 0,0781 | 0,0650 | 0,0610 |
Manufacturer:: NXP
Manufacturer part number: BSH108 RoHS
Case style: SOT23t/r
In stock:
1500 pcs.
Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
---|---|---|---|---|---|
Net price (EUR) | 0,2136 | 0,1183 | 0,0784 | 0,0655 | 0,0610 |
Manufacturer:: Nexperia
Manufacturer part number: BSH108,215
Case style: SOT23
External warehouse:
51000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,0804 |
Manufacturer:: Nexperia
Manufacturer part number: BSH108,215
Case style: SOT23
External warehouse:
39000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,0760 |
Open channel resistance: | 240mOhm |
Max. drain current: | 1,9A |
Max. power loss: | 830mW |
Case: | SOT23 |
Manufacturer: | NXP |
Max. drain-source voltage: | 30V |
Max. drain-gate voltage: | 30V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -65°C ~ 150°C |
Mounting: | SMD |
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