BSH108

Symbol Micros: TBSH108

71182

TBSH108

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

N-MOSFET 1.9A 0.83W 0.12Ω

Parameters

Open channel resistance:	240mOhm
Max. drain current:	1,9A
Max. power loss:	830mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	30V
Max. drain-gate voltage:	30V

All parameters

Manufacturer:: NXP Manufacturer part number: BSH108 RoHS Case style: SOT23t/r  

In stock:

1500 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2136	0,1183	0,0784	0,0655	0,0610

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Packaging:
3000 Quantity (multiple: 1)

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Manufacturer:: NXP Manufacturer part number: BSH108 RoHS Case style: SOT23t/r  

In stock:

360 pcs.

Quantity of pcs.	5+	20+	100+	500+	2180+
Net price (EUR)	0,2136	0,1178	0,0782	0,0650	0,0610

Add to comparison tool Add inquiry (RFQ)

Packaging:
2180 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	240mOhm
Max. drain current:	1,9A
Max. power loss:	830mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	30V
Max. drain-gate voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	SMD

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