BSH111

Symbol Micros: TBSH111

115836

TBSH111

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; 55V; 55V; 10V; 8Ohm; 335mA; 830mW; -65°C ~ 150°C;

Parameters

Open channel resistance:	8Ohm
Max. drain current:	335mA
Max. power loss:	830mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	55V
Max. drain-gate voltage:	55V

All parameters

Manufacturer:: NXP Manufacturer part number: BSH111 RoHS Case style: SOT23t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,5141	0,3099	0,2371	0,2132	0,2059

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	8Ohm
Max. drain current:	335mA
Max. power loss:	830mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	55V
Max. drain-gate voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	SMD

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