BSH114

Symbol Micros: TBSH114

193930

TBSH114

Contractor Symbol:

Case : SOT23-3

Datasheet

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Trans MOSFET N-CH 100V 0.85A 3-Pin TO-236AB BSH114,235 BSH114,215

Parameters

Open channel resistance:	1,15Ohm
Max. drain current:	850mA
Max. power loss:	830mW
Case:	SOT23-3
Manufacturer:	NXP
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V

All parameters

Manufacturer:: NXP Manufacturer part number: BSH114,215 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

63 pcs.

Quantity of pcs.	1+	5+	20+	100+	200+
Net price (EUR)	1,0846	0,7160	0,5892	0,5282	0,5165

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Packaging:
20/200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,15Ohm
Max. drain current:	850mA
Max. power loss:	830mW
Case:	SOT23-3
Manufacturer:	NXP
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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