BSH201

Symbol Micros: TBSH201
Contractor Symbol:
Case : SOT23-3
Trans MOSFET P-CH 60V 0.3A 3-Pin TO-236AB BSH201,215
Parameters
Open channel resistance: 4,25Ohm
Max. drain current: 300mA
Max. power loss: 417mW
Case: SOT23-3
Manufacturer: NXP
Max. drain-source voltage: 60V
Max. drain-gate voltage: 60V
         
 
Item available on request
Open channel resistance: 4,25Ohm
Max. drain current: 300mA
Max. power loss: 417mW
Case: SOT23-3
Manufacturer: NXP
Max. drain-source voltage: 60V
Max. drain-gate voltage: 60V
Max. gate-source Voltage: 20V
Transistor type: P-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD