BSH201

Symbol Micros: TBSH201

193931

TBSH201

Contractor Symbol:

Case : SOT23-3

Datasheet

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Trans MOSFET P-CH 60V 0.3A 3-Pin TO-236AB BSH201,215

Parameters

Open channel resistance:	4,25Ohm
Max. drain current:	300mA
Max. power loss:	417mW
Case:	SOT23-3
Manufacturer:	NXP
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V

All parameters

Manufacturer:: NXP Manufacturer part number: BSH201,215 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

2270 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,2714	0,1434	0,1112	0,1025	0,0983

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4,25Ohm
Max. drain current:	300mA
Max. power loss:	417mW
Case:	SOT23-3
Manufacturer:	NXP
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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