BSH202

Symbol Micros: TBSH202
Contractor Symbol:
Case : SOT23
Technical drawing Add to favourites
Transistor P-Channel MOSFET; 30V; 30V; 20V; 1,35Ohm; 520mA; 417mW; -55°C ~ 150°C;
Parameters
Open channel resistance: 1,35Ohm
Max. drain current: 520mA
Max. power loss: 417mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 30V
Max. drain-gate voltage: 30V
Manufacturer:: NXP Manufacturer part number: BSH202 RoHS Case style: SOT23t/r  
In stock:
300 pcs.
Quantity of pcs. 3+ 10+ 50+ 300+ 1500+
Net price (EUR) 0,3079 0,1972 0,1387 0,1178 0,1120
Add to comparison tool
Packaging:
300
Open channel resistance: 1,35Ohm
Max. drain current: 520mA
Max. power loss: 417mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 30V
Max. drain-gate voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols