BSH205

Symbol Micros: TBSH205

86223

TBSH205

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

P-MOSFET 0.75A 12V 0.417W 0.9Ω

Parameters

Open channel resistance:	750mOhm
Max. drain current:	750mA
Max. power loss:	417mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	12V
Max. drain-gate voltage:	12V

All parameters

Manufacturer:: NXP Manufacturer part number: BSH205G2 RoHS Case style: SOT23t/r  

In stock:

4555 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,4423	0,2668	0,2055	0,1854	0,1765

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Packaging:
3000/6000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	750mOhm
Max. drain current:	750mA
Max. power loss:	417mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	12V
Max. drain-gate voltage:	12V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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