BSM15GD120DN2E3224BOSA1 INFINEON

Symbol Micros: TBSM15gd120dn2

194847

TBSM15gd120dn2

Contractor Symbol:

Case : Rys.BSM15GD120DN2E3224

Datasheet

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Trans IGBT Module N-CH

Parameters

Max. dissipated power:	145W
Max collector current (impulse):	50A
Max. collector current:	25A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Manufacturer:	INFINEON
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 125°C

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• Parameters

Max. dissipated power:	145W
Max collector current (impulse):	50A
Max. collector current:	25A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Manufacturer:	INFINEON
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 125°C
Gate-emitter voltage:	20V
Mounting:	THT

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