BSN20 NXP

Symbol Micros: TBSN20

54104

TBSN20

Contractor Symbol:

Case : SOT23

Datasheet

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N-MOSFET 173mA 50V 830mW

Parameters

Open channel resistance:	28Ohm
Max. drain current:	173mA
Max. power loss:	830mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	50V
Max. drain-gate voltage:	50V

All parameters

Manufacturer:: NXP Manufacturer part number: BSN20 RoHS Case style: SOT23t/r  

In stock:

2600 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2021	0,1026	0,0622	0,0492	0,0449

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	28Ohm
Max. drain current:	173mA
Max. power loss:	830mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	50V
Max. drain-gate voltage:	50V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	SMD

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