BSN20 NXP

Symbol Micros: TBSN20
Contractor Symbol:
Case : SOT23
N-MOSFET 173mA 50V 830mW
Parameters
Open channel resistance: 28Ohm
Max. drain current: 173mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 50V
Max. drain-gate voltage: 50V
Manufacturer:: NXP Manufacturer part number: BSN20 RoHS Case style: SOT23t/r  
In stock:
2900 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2387 0,1205 0,0730 0,0579 0,0528
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Packaging:
3000
Open channel resistance: 28Ohm
Max. drain current: 173mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 50V
Max. drain-gate voltage: 50V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -65°C ~ 150°C
Mounting: SMD