BSO613SPV G Infineon

Symbol Micros: TBSO613spv
Contractor Symbol:
Case : SOIC08
P-MOSFET 60V 3.44A 2.5W 130mΩ
Parameters
Open channel resistance: 130mOhm
Max. drain current: 3,44A
Max. power loss: 2,5W
Case: SOIC08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: BS0613SPV G RoHS Case style: SOIC08t/r Datasheet
In stock:
20 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,8550 0,5370 0,4452 0,3981 0,3722
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Packaging:
100
Manufacturer:: Infineon Manufacturer part number: BSO613SPVGXUMA1 Case style: SOIC08  
External warehouse:
3426 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3722
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 130mOhm
Max. drain current: 3,44A
Max. power loss: 2,5W
Case: SOIC08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD