BSO613SPV G Infineon

Symbol Micros: TBSO613spv

113492

TBSO613spv

Contractor Symbol:

Case : SOIC08

Datasheet

Technical drawing Add to favourites

P-MOSFET 60V 3.44A 2.5W 130mΩ

Parameters

Open channel resistance:	130mOhm
Max. drain current:	3,44A
Max. power loss:	2,5W
Case:	SOIC08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BS0613SPV G RoHS Case style: SOIC08t/r Datasheet

In stock:

20 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,7771	0,4883	0,4061	0,3615	0,3381

Add to comparison tool Add inquiry (RFQ)

Packaging:
100 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	130mOhm
Max. drain current:	3,44A
Max. power loss:	2,5W
Case:	SOIC08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.