BSP125

Symbol Micros: TBSP125

40384

TBSP125

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

N-MOSFET 0.12A 600V 1.8W 45Ω

Parameters

Open channel resistance:	60Ohm
Max. drain current:	120mA
Max. power loss:	1,8W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSP125-L6327 RoHS Case style: SOT223t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	15+	100+	300+	1000+
Net price (EUR)	0,5360	0,2975	0,2352	0,2217	0,2146

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	60Ohm
Max. drain current:	120mA
Max. power loss:	1,8W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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