BSP125

Symbol Micros: TBSP125
Contractor Symbol:
Case : SOT223
N-MOSFET 0.12A 600V 1.8W 45Ω
Parameters
Open channel resistance: 60Ohm
Max. drain current: 120mA
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSP125-L6327 RoHS Case style: SOT223t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,5817 0,3638 0,3036 0,2688 0,2526
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Packaging:
100
Open channel resistance: 60Ohm
Max. drain current: 120mA
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD