BSP135

Symbol Micros: TBSP135
Contractor Symbol:
Case : SOT223
N-MOSFET 0.12A 600V 1.8W 45Ω
Parameters
Open channel resistance: 60Ohm
Max. drain current: 120mA
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSP135H6327XTSA1 RoHS Case style: SOT223t/r Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,5188 1,1576 0,9585 0,8405 0,7988
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Packaging:
50
Open channel resistance: 60Ohm
Max. drain current: 120mA
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD