BSP170P

Symbol Micros: TBSP170p

114476

TBSP170p

Contractor Symbol:

Case : SOT223

Datasheet

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Transistor P-Channel MOSFET; 60V; 20V; 300mOhm; 1,9A; 1,8W; -55°C ~ 150°C; BSP170PH6327XTSA1

Parameters

Open channel resistance:	300mOhm
Max. drain current:	1,9A
Max. power loss:	1,8W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: BSP170PH6327 RoHS Case style: SOT223t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,5516	0,3462	0,2885	0,2562	0,2400

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Packaging:
100 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: BSP170PH6327XTSA1 Case style: SOT223  

External warehouse:

21125 pcs.

Quantity of pcs.	25+ (Please wait for the order confirmation)
Net price (EUR)	0,7524

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Packaging:
25

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	300mOhm
Max. drain current:	1,9A
Max. power loss:	1,8W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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