BSP295

Symbol Micros: TBSP295

67362

TBSP295

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

N-MOSFET 1.8A 60V 1.8W 0.3Ω

Parameters

Open channel resistance:	500mOhm
Max. drain current:	1,8A
Max. power loss:	1,8W
Case:	SOT223
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSP295H6327XTSA1 RoHS Case style: SOT223t/r Datasheet

In stock:

1000 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5663	0,3580	0,2831	0,2574	0,2457

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Packaging:
1000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	500mOhm
Max. drain current:	1,8A
Max. power loss:	1,8W
Case:	SOT223
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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