BSP296NH6327XTSA1

Symbol Micros: TBSP296N

124303

TBSP296N

Contractor Symbol:

Case : SOT223-4

Datasheet

Technical drawing Add to favourites

Trans MOSFET N-CH 100V 1.2A Automotive 4-Pin(3+Tab) SOT-223 BSP296NH6433XTMA1

Parameters

Open channel resistance:	800mOhm
Max. drain current:	1,2A
Max. power loss:	1,8W
Case:	SOT223-4
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSP296NH6327XTSA1 RoHS Case style: SOT223-4 t/r Datasheet

In stock:

1136 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,6938	0,4413	0,3469	0,3162	0,3021

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Packaging:
1000 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BSP296NH6327XTSA1 Case style: SOT223-4  

External warehouse:

2300 pcs.

Quantity of pcs.	100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3021

Add to comparison tool Add inquiry (RFQ)

Packaging:
100

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: BSP296NH6327XTSA1 Case style: SOT223-4  

External warehouse:

284000 pcs.

Quantity of pcs.	2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3021

Add to comparison tool Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: BSP296NH6327XTSA1 Case style: SOT223-4  

External warehouse:

62000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3021

Add to comparison tool Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	800mOhm
Max. drain current:	1,2A
Max. power loss:	1,8W
Case:	SOT223-4
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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