BSP297

Symbol Micros: TBSP297

49027

TBSP297

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

N-MOSFET 0.66A 200V 1.8W 1.8Ω

Parameters

Open channel resistance:	3Ohm
Max. drain current:	660mA
Max. power loss:	1,8W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSP297 RoHS Case style: SOT223t/r Datasheet

In stock:

80 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6796	0,4265	0,3539	0,3164	0,2953

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BSP297H6327XTSA1 Case style: SOT223  

External warehouse:

10325 pcs.

Quantity of pcs.	25+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2953

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Packaging:
25

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: BSP297H6327XTSA1 Case style: SOT223  

External warehouse:

195000 pcs.

Quantity of pcs.	2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2953

Add to comparison tool Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: BSP297H6327XTSA1 Case style: SOT223  

External warehouse:

36881 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2953

Add to comparison tool Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	3Ohm
Max. drain current:	660mA
Max. power loss:	1,8W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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