BSP297
Symbol Micros:
TBSP297
Case : SOT223
N-MOSFET 0.66A 200V 1.8W 1.8Ω
Parameters
Open channel resistance: | 3Ohm |
Max. drain current: | 660mA |
Max. power loss: | 1,8W |
Case: | SOT223 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 200V |
Transistor type: | N-MOSFET |
Open channel resistance: | 3Ohm |
Max. drain current: | 660mA |
Max. power loss: | 1,8W |
Case: | SOT223 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 200V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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