BSP297

Symbol Micros: TBSP297
Contractor Symbol:
Case : SOT223
N-MOSFET 0.66A 200V 1.8W 1.8Ω
Parameters
Open channel resistance: 3Ohm
Max. drain current: 660mA
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSP297 RoHS Case style: SOT223t/r Datasheet
In stock:
80 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6786 0,4259 0,3533 0,3159 0,2948
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Packaging:
100
Open channel resistance: 3Ohm
Max. drain current: 660mA
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD