BSP297

Symbol Micros: TBSP297
Contractor Symbol:
Case : SOT223
N-MOSFET 0.66A 200V 1.8W 1.8Ω
Parameters
Open channel resistance: 3Ohm
Max. drain current: 660mA
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 200V
Max. gate-source Voltage: 20V
Manufacturer:: Infineon Manufacturer part number: BSP297 RoHS Case style: SOT223t/r Datasheet
In stock:
30 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6416 0,4039 0,3347 0,2977 0,2793
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Packaging:
100
Manufacturer:: Infineon Manufacturer part number: BSP297H6327XTSA1 Case style: SOT223  
External warehouse:
1900 pcs.
Quantity of pcs. 25+ (Please wait for the order confirmation)
Net price (EUR) 1,1275
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 3Ohm
Max. drain current: 660mA
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 200V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD