BSP297

Symbol Micros: TBSP297

49027

TBSP297

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

N-MOSFET 0.66A 200V 1.8W 1.8Ω

Parameters

Open channel resistance:	3Ohm
Max. power loss:	1,8W
Max. drain current:	660mA
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSP297 RoHS Case style: SOT223t/r Datasheet

In stock:

30 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6487	0,4083	0,3383	0,3010	0,2823

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	3Ohm
Max. power loss:	1,8W
Max. drain current:	660mA
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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