BSP317P

Symbol Micros: TBSP317p
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Case : SOT223
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P-MOSFET 0.43A 250V 1.8W 4Ω
Parameters
Open channel resistance: 5Ohm
Max. drain current: 430mA
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 250V
Transistor type: P-MOSFET
         
 
Item available on request
Open channel resistance: 5Ohm
Max. drain current: 430mA
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 250V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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