BSP322P Infineon

Symbol Micros: TBSP322p

103799

TBSP322p

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

P-MOSFET 100V 1A 800mΩ 1.8W

Parameters

Open channel resistance:	1Ohm
Max. drain current:	1A
Max. power loss:	1,8W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSP322PH6327XTSA1 RoHS Case style: SOT223t/r Datasheet

In stock:

40 pcs.

Quantity of pcs.	2+	15+	100+	300+	1000+
Net price (EUR)	0,4698	0,2607	0,2053	0,1935	0,1874

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1Ohm
Max. drain current:	1A
Max. power loss:	1,8W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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