BSR316PH6327XTSA1

Symbol Micros: TBSR316p

112200

TBSR316p

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Case : SC-59

Datasheet

Technical drawing Add to favourites

P-MOSFET 0.36A 100V 0.500W 1.8Ω

Parameters

Open channel resistance:	1,18Ohm
Max. drain current:	360mA
Max. power loss:	500mW
Case:	SC-59
Manufacturer:	INFINEON
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	1,18Ohm
Max. drain current:	360mA
Max. power loss:	500mW
Case:	SC-59
Manufacturer:	INFINEON
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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