BSS119NH6327 Infineon

Symbol Micros: TBSS119n

109857

TBSS119n

Contractor Symbol:

Case : SOT23

Datasheet

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N-MOSFET 100V 0.19A 6Ω BSS119NH6327XTSA1

Parameters

Open channel resistance:	10Ohm
Max. power loss:	500mW
Max. drain current:	190mA
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS119NH6327XTSA1 RoHS Case style: SOT23t/r Datasheet

In stock:

2540 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2801	0,1546	0,1026	0,0857	0,0798

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	10Ohm
Max. power loss:	500mW
Max. drain current:	190mA
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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