BSS123 SOT23 MDD(MICRODIODE)

Symbol Micros: TBSS123 MDD

527466

TBSS123 MDD

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 5,5Ohm; 200mA; 350mW; -50°C~150°C;

Parameters

Open channel resistance:	5,5Ohm
Max. drain current:	200mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	MDD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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Estimated date:
2026-04-20

Quantity of pcs.: 6000

• Parameters

Open channel resistance:	5,5Ohm
Max. drain current:	200mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	MDD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-50°C ~ 150°C
Mounting:	SMD

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