BSS123_R1_00001 Panjit International Inc.

Symbol Micros: TBSS123_R1_00001

390981

TBSS123_R1_00001

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW Substitute: BSS123-R1; BSS123_R1_00001;

Parameters

Open channel resistance:	10Ohm
Max. drain current:	170mA
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	PANJIT
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	10Ohm
Max. drain current:	170mA
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	PANJIT
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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