BSS123I

Symbol Micros: TBSS123i
Contractor Symbol:
Case : SOT23
Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 190mA; 500mW; -55°C ~ 150°C; BSS123IXTSA1;
Parameters
Open channel resistance: 10Ohm
Max. power loss: 500mW
Max. drain current: 190mA
Case: SOT23
Manufacturer: INFINEON
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS123IXTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
0 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1643 0,0779 0,0439 0,0334 0,0299
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BSS123IXTSA1 Case style: SOT23  
External warehouse:
24000 pcs.
Quantity of pcs. 18000+ (Please wait for the order confirmation)
Net price (EUR) 0,0299
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: BSS123IXTSA1 Case style: SOT23  
External warehouse:
282000 pcs.
Quantity of pcs. 6000+ (Please wait for the order confirmation)
Net price (EUR) 0,0299
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
         
 
Item in delivery
Estimated date:
2026-07-10
Quantity of pcs.: 3000
Open channel resistance: 10Ohm
Max. power loss: 500mW
Max. drain current: 190mA
Case: SOT23
Manufacturer: INFINEON
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD