BSS123I

Symbol Micros: TBSS123i

349673

TBSS123i

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 190mA; 500mW; -55°C ~ 150°C; BSS123IXTSA1;

Parameters

Open channel resistance:	10Ohm
Max. drain current:	190mA
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	INFINEON
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS123IXTSA1 RoHS Case style: SOT23t/r Datasheet

In stock:

0 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1604	0,0761	0,0428	0,0326	0,0292

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Packaging:
3000 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: BSS123IXTSA1 Case style: SOT23  

External warehouse:

309000 pcs.

Quantity of pcs.	6000+ (Please wait for the order confirmation)
Net price (EUR)	0,0292

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
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• Parameters

Open channel resistance:	10Ohm
Max. drain current:	190mA
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	INFINEON
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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