BSS123I

Symbol Micros: TBSS123i

349673

TBSS123i

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 190mA; 500mW; -55°C ~ 150°C; BSS123IXTSA1;

Parameters

Open channel resistance:	10Ohm
Max. drain current:	190mA
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	INFINEON
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS123IXTSA1 Case style: SOT23  

External warehouse:

288000 pcs.

Quantity of pcs.	6000+ (Please wait for the order confirmation)
Net price (EUR)	0,0237

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

         

 

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Item in delivery

Estimated date:
2026-11-13

Quantity of pcs.: 3000

• Parameters

Open channel resistance:	10Ohm
Max. drain current:	190mA
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	INFINEON
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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