BSS123NH6327XTSA1 Infineon

Symbol Micros: TBSS123n
Contractor Symbol:
Case : SOT23
N-MOSFET 100V 190mA 6Ω 500mW BSS123NH6433XTMA1
Parameters
Open channel resistance: 10Ohm
Max. drain current: 190mA
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS123NH6327XTSA1 Case style: SOT23  
External warehouse:
8400 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0466
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BSS123NH6327XTSA1 Case style: SOT23  
External warehouse:
1104000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0323
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BSS123NH6433XTMA1 Case style: SOT23  
External warehouse:
330000 pcs.
Quantity of pcs. 10000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0321
Add to comparison tool
Packaging:
10000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 10Ohm
Max. drain current: 190mA
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD