BSS123W

Symbol Micros: TBSS123W YY

347166

TBSS123W YY

Contractor Symbol:

Case : SOT323

Datasheet

Technical drawing Add to favourites

100V 200mA 3Ω@10V,200mA 150mW 1.8V@250uA 7pF@50V; N Channel; 32pF@50V;; -55C~+150C; SOT-323 MOSFETs

Parameters

Open channel resistance:	3Ohm
Max. drain current:	200mA
Max. power loss:	150mW
Case:	SOT323
Manufacturer:	Yangzhou Yangjie Electronic Technology Co., Ltd.
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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Estimated date:
2025-08-30

Quantity of pcs.: 3000

• Parameters

Open channel resistance:	3Ohm
Max. drain current:	200mA
Max. power loss:	150mW
Case:	SOT323
Manufacturer:	Yangzhou Yangjie Electronic Technology Co., Ltd.
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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