BSS126H6327 Infineon

Symbol Micros: TBSS126
Contractor Symbol:
Case : SOT23
N-MOSFET 600V 0.021A 500Ω 500mW BSS126H6327XTSA2
Parameters
Open channel resistance: 700Ohm
Max. drain current: 21mA
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS126 H6327 RoHS Case style: SOT23t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2715 0,1437 0,1114 0,1030 0,0985
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BSS126H6327XTSA2 Case style: SOT23  
External warehouse:
12000 pcs.
Quantity of pcs. 3000+ (Please wait for the order confirmation)
Net price (EUR) 0,0985
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: BSS126H6327XTSA2 Case style: SOT23  
External warehouse:
60000 pcs.
Quantity of pcs. 6000+ (Please wait for the order confirmation)
Net price (EUR) 0,0985
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 700Ohm
Max. drain current: 21mA
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD