BSS126H6327 Infineon

Symbol Micros: TBSS126
Contractor Symbol:
Case : SOT23
N-MOSFET 600V 0.021A 500Ω 500mW BSS126H6327XTSA2
Parameters
Open channel resistance: 700Ohm
Max. drain current: 21mA
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS126 H6327 RoHS Case style: SOT23t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2725 0,1442 0,1118 0,1033 0,0989
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Packaging:
3000
Open channel resistance: 700Ohm
Max. drain current: 21mA
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD